METHOD FOR FABRICATING ISOLATION AREA OF SEMICONDUCTOR DEVICE

摘要

A method for forming a semiconductor isolation region is provided to prevent moats between an active region and an isolation region by using a diluted HF solution. A pad nitride pattern is formed by etching a pad nitride layer, after a pad oxide layer and a pad nitride layer are sequentially formed on a substrate(300). An isolation region pattern is formed by etching the substrate using the pad nitride pattern as a mask. A wall oxide layer(330) is formed on the isolation region pattern, and a linear nitride layer(340) is formed on the wall oxide layer. An isolation layer(350) is formed by filling an oxide layer in the isolation region pattern and by planarizing. The linear nitride layer, the pad nitride pattern and the pad oxide layer are sequentially removed by using HF solution with the concentration of 0.25~0.5 wt%.