| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device introduced into a low dielectric interlayer insulated film to suppress the deterioration of performance of a wiring due to damage, and to provide the method for manufacturing the same. SOLUTION: The semiconductor device is equipped with a wiring structure having: a low dielectric constant insulated film on which at least one of a wiring groove or a connecting hole is formed, while a carbon density or a film density near the surface of the wiring groove or the connecting hole is equal to or higher than those of inside of the wiring groove or the connecting hole; a conductor layer formed in the wiring groove or the connecting hole; a barrier metal provided between the low dielectric constant insulated film and the conductor layer; and a second insulated film provided between the barrier metal and the low dielectric constant insulated film. COPYRIGHT: (C)2007,JPO&INPIT |
