| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma etching system capable of reducing a pressure within a plasma process chamber in a short time after a work is delivered. SOLUTION: The plasma etching system comprises a lower electrode unit provided with a work holding table for holding a work on the upper surface provided in a housing and upper electrode unit so arranged as to face the work holding table of the lower electrode unit, a gate for opening/closing a work delivery opening formed in the housing, and a pressure reducing means for reducing the pressure in the housing. The interior of the housing is divided into a plasma process chamber and a work delivery chamber by a partition comprising an insert opening at its center. The work delivery opening is opened to a work delivery chamber. The lower electrode unit is arranged in the work delivery chamber. The upper electrode unit is arranged in the plasma process chamber. The lower electrode unit is equipped with an operation means for positioning the work holding table at a work delivery position and a plasma process position. A shutter means is provided to open/close the insert opening provided to the partition. COPYRIGHT: (C)2007,JPO&INPIT
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