| 摘要 |
PROBLEM TO BE SOLVED: To provide a simply structured semiconductor device, where base resistance and collector resistance are low, excellent high-frequency characteristics can be obtained, and epitaxial growth is used, and to provide a method for manufacturing the semiconductor device. SOLUTION: On a p-type semiconductor substrate 1, an n-type impurity embedded region 2 that becomes a collector region, an n-type epitaxial layer 3, and an element separation region 4 using an insulating film are formed. An Si layer and an SiGe layer are formed on the n-type epitaxial layer 3 and the element separation region 4 by epitaxial growth. In this case, on the n-type epitaxial layer 3, an n-type Si buffer layer (a single crystal region) 6 in which an n-type impurity that becomes the collector region is doped, and a p-type SiGe layer/p-type Si layer (a single crystal region) 8 in which a p-type impurity that becomes a base region is doped are laminated. An n-type Si buffer layer 6 is formed by doping phosphorus fixedly in nonselective epitaxial growth. COPYRIGHT: (C)2007,JPO&INPIT
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