发明名称 RFID device having nonvolatile ferroelectric capacitor
摘要 A capacitor applied to a voltage multiplier and a modulator/demodulator of a RFID device is formed as a nonvolatile ferroelectric capacitor formed by the same process of a memory cell capacitor. The nonvolatile ferroelectric capacitor has a high dielectric constant to reduce the area of the capacitor.
申请公布号 US2006267766(A1) 申请公布日期 2006.11.30
申请号 US20050320987 申请日期 2005.12.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KANG HEE B.;AHN JIN H.
分类号 G08B13/14 主分类号 G08B13/14
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