发明名称 |
Method for manufacturing semiconductor device, and semiconductor device |
摘要 |
The present invention provides a manufacturing method of a thinned semiconductor device with high reliability at low cost and a semiconductor device manufactured by the method. A peeling layer, a transistor, and an insulating layer are formed in this order over a substrate, an opening is formed so as to expose at least a part of the peeling layer, and the transistor is peeled off from the substrate by a physical means. The peeling layer is formed by forming a metal film and a metal oxide film so as to be in contact with the metal film by a method using a solution.
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申请公布号 |
US2006266410(A1) |
申请公布日期 |
2006.11.30 |
申请号 |
US20060417182 |
申请日期 |
2006.05.04 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
OGITA KAORI;TAMURA TOMOKO;MARUYAMA JUNYA;DAIRIKI KOJI |
分类号 |
H01L31/00 |
主分类号 |
H01L31/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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