| 摘要 |
<p>A TFT and a manufacturing method thereof are provided to reinforce the adhesiveness between a substrate and a gate insulating layer by performing a surface treatment on the substrate under a predetermined plasma condition. A substrate(110) is prepared. An organic insulating layer is formed on the substrate. A surface treatment is performed on the substrate in a predetermined plasma state to intensify the adhesiveness between the substrate and the organic insulating layer before the organic insulating layer forming process. The surface treatment is performed by using one selected from a group consisting of Ar, O2, N2, CO2, and CF4.</p> |
