SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

Diffusion of a p-type impurity (typically, magnesium) included in a semiconductor region of a group III-V compound semiconductor to other adjacent semiconductor regions is suppressed. A semiconductor device (10) is provided with a first semiconductor region (28) composed of gallium nitride (GaN) which includes magnesium, i.e. a p-type impurity; a second semiconductor region (34) composed of gallium nitride; and an impurity diffusion suppressing film (32) composed of silicon oxide (SiO<SUB>2</SUB>) between the first semiconductor region (28) and the second semiconductor region (34).