发明名称 COMPOSITION FOR PHOTORESIST COATING, METHOD FOR FORMING PHOTORESIST PATTERN, AND SEMICONDUCTOR ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a method for forming a fine pattern in a semiconductor process. SOLUTION: In the method for forming the fine pattern using a composition for a photoresist coating, by coating the already formed photoresist pattern with the composition for the photoresist coating containing a water soluble polymer and an aqueous solvent, sizes of a photoresist contact hole and a space are effectively reduced. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006323350(A) 申请公布日期 2006.11.30
申请号 JP20060008631 申请日期 2006.01.17
申请人 HYNIX SEMICONDUCTOR INC;YOUNGCHANG CHEMICAL CO LTD 发明人 LEE GEUN SU;MOON SEUNG CHAN;LEE SEUNG HUN
分类号 G03F7/40;H01L21/027 主分类号 G03F7/40
代理机构 代理人
主权项
地址