发明名称 Semiconductor device, semiconductor device manufacturing method, and semiconductor device test method
摘要 A semiconductor device manufacturing method includes forming a first layer and a second layer being different from the first layer, the first layer having a plurality of first test elements, the second layer having a plurality of pads, and adhering the first and second layers to electrically connect the first test elements to the pads.
申请公布号 US2006267010(A1) 申请公布日期 2006.11.30
申请号 US20060498247 申请日期 2006.08.03
申请人 发明人 MATSUBARA YOSHINORI
分类号 G01R31/28;H01L23/58;H01L21/66;H01L21/822;H01L23/34;H01L23/544;H01L27/04 主分类号 G01R31/28
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