发明名称 |
Method to increase the compressive stress of PECVD silicon nitride films |
摘要 |
Compressive stress in a film of a semiconductor device may be controlled utilizing one or more techniques, employed alone or in combination. A first set of embodiments increase silicon nitride compressive stress by adding hydrogen to the deposition chemistry, and reduce defects in a device fabricated with a high compressive stress silicon nitride film formed in the presence of hydrogen gas. A silicon nitride film may comprise an initiation layer formed in the absence of a hydrogen gas flow, underlying a high stress nitride layer formed in the presence of a hydrogen gas flow. A silicon nitride film formed in accordance with an embodiment of the present invention may exhibit a compressive stress of 2.8 GPa or higher.
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申请公布号 |
US2006269692(A1) |
申请公布日期 |
2006.11.30 |
申请号 |
US20060398146 |
申请日期 |
2006.04.05 |
申请人 |
APPLIED MATERIALS, INC. A DELAWARE CORPORATION |
发明人 |
BALSEANU MIHAELA;XIA LI-QUN;ZUBKOV VLADIMIR;SHEK MEI-YEE;ROFLOX ISABELITA;M'SAAD HICHEM |
分类号 |
H05H1/24;B05D3/00 |
主分类号 |
H05H1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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