| 摘要 |
An MOS-transistor structure includes a highly doped first region (1,9) of a first conductivity type, a weakly-doped drift- region (2) of a first conductivity type bordering on the first region (1,9) and at least one body-region (3) of a second conductivity type, bordering on the drift-region (2). At least one source region (4) of a first conductivity type is embedded in the body region (3), and a gate electrode (6) is separated by a gate oxide (7) from at least one body region (3) and at least one source region (4). Starting from the first region (1,9), a highly doped region of a first conductivity type extends in the direction of the body region (3) into the drift region (2). The first region (1,9) is specifically designed as a drain region (1) and the MOS- transistor structure is specifically designed as a vertical transistor structure, or as an up-drain transistor structure. |
