POLYSILANE COMPOUND-CONTAINING LOWER LAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY

摘要

[PROBLEMS] To provide a lower layer film for use in the step of lithography in the production of a semiconductor device, which lower layer film may be used as a hard mask and does not cause intermixing with a photoresist, and to provide a composition for lower film formation. [MEANS FOR SOLVING PROBLEMS] A lower layer film forming composition for use in the step of lithography in the production of a semiconductor device, which composition comprises a polysilane compound, a crosslinkable compound, a crosslinking catalyst, and a solvent. The polysilane compound is a polysilane compound having a silicon-silicon bond in its main chain.