发明名称 |
SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE HAVING AT LEAST ONE GROUP OF SUBSTANTIALLY UNDOPED LAYER |
摘要 |
A semiconductor device includes a superlattice that, in turn, includes a plurality of stacked groups of layers. Each group of the superlattice may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon. Moreover, the energy-band modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. At least one group of layers of the superlattice may be substantially undoped.
|
申请公布号 |
CA2609585(A1) |
申请公布日期 |
2006.11.30 |
申请号 |
CA20062609585 |
申请日期 |
2006.05.09 |
申请人 |
MEARS TECHNOLOGIES, INC. |
发明人 |
MEARS, ROBERT J.;KREPS, SCOTT A. |
分类号 |
H01L29/15;H01L21/8238;H01L29/10;H01L29/772;H01L29/78 |
主分类号 |
H01L29/15 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|