A METHOD FOR DEPOSITING A METAL LAYER ON A SEMICONDUCTOR INTERCONNECT STRUCTURE HAVING A CAPPING LAYER,申请号KR20057008343-传众专利搜索

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发明名称	A METHOD FOR DEPOSITING A METAL LAYER ON A SEMICONDUCTOR INTERCONNECT STRUCTURE HAVING A CAPPING LAYER
摘要
申请公布号	KR100652334(B1)	申请公布日期	2006.11.30
申请号	KR20057008343	申请日期	2005.05.11
申请人		发明人
分类号	H01L21/768	主分类号	H01L21/768
代理机构		代理人
主权项
地址

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