LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING SAME, AND SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a light emitting device capable of improving the extraction efficiency of light without increasing a production cost, and also to provide a method of manufacturing the light emitting device and a nitride semiconductor substrate capable of being used for the manufacture of the light emitting device.

SOLUTION: The light emitting device comprises: a GaN substrate 1; an n-type AlxGa1-xN layer 3 on the side of a first principal surface of the GaN substrate 1; a p-type AlxGa1-xN layer 5 located more far away than the n-type AlxGa1-xN layer 3 as viewed from the GaN substrate 1; and a quantum well (MQW: Multi-Quantum Well) 4 located between the n-type AlxGa1-xN layer 3 and the p-type AlxGa1-xN layer 5. In the light emitting device, the side of the p-type AlxGa1-xN layer 5 is down-packaged to permit light to be emitted from a second principal surface 1a, a principal surface on the opposite to the first principal surface of the GaN substrate 1. A semispherical protruded part 82 is formed on the second principal surface 1a of the GaN substrate 1.

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