| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a composite surface processing device that serves as an ion implantation device using an ion beam and also as a plasma doping device at the same time, and carries out a low-energy ion doping process using an ion beam with high accuracy and high efficiency. <P>SOLUTION: The surface processing device 10 is equipped with: an ion implantation unit 31 and a plasma doping unit 21, and the ion implantation unit 31 is equipped with a decelerator 37 decelerating ions, a deflector 38 deflecting the decelerated ions toward a stage 4, and a bias power supply 9 guiding ions to the stage 4. The deflector 38 removes neutral particles from the ion beam, and the bias power supply 9 attracts an ion beam of low-energy emitted from the deflector 37 to a wafer W. By this setup, a low-energy ion doping process is carried out by the use of the ion implantation unit 31 with high impurity and high efficiency. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
