| 摘要 |
PROBLEM TO BE SOLVED: To attain microfabrication of memory cells without diffusing the bit line diffusion layer greatly after formation of a bit line insulating film, while securing sufficient area of a joint and restraining the increase of the diffusion layer resistance in the joint. SOLUTION: The semiconductor device is formed in the upper part of the semiconductor substrate 1, and it has a plurality of bit line diffusion layers 2 extending toward a line direction respectively, a pluraliry of bit line insulating films 3 formed on the each bit line diffusion layer 2 respectively, a plurality of gate insulating layers 10 formed among each bit line diffusion layer 2, and a plurality of word lines 4 which intersect the each bit line insulating layer 3 and the each gate insulating films 10. A memory cell is formed in the intersection of each gate insulating film 10 and each word line 4, and in the upper part of the semiconductor substrate 1, a plurality of joint diffusion layers 6 having a joint 6a electrically connected to the each bit line diffusion layer 2 respectively are formed, and the upper surface of the each joint 6a in the semiconductor substrate 1 is lower than that of the each joint diffusion layer 6. COPYRIGHT: (C)2007,JPO&INPIT
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