| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage for inhibiting variations in the threshold of a memory cell transistor composed of a stack gate electrode, and also to provide a method for manufacturing the nonvolatile semiconductor storage. SOLUTION: The nonvolatile semiconductor storage comprises: a semiconductor substrate 1 having a main surface; and a plurality of stack gate electrodes SG1-SG3 formed on the main surface of the semiconductor substrate 1 with an interval one another. Each of the plurality of stack gate electrodes SG1-SG3 has a floating gate electrode 4 and a control gate electrode 13 that are insulated from and laminated with each other. The control gate electrode 13 has a conductive film 11 containing a high-melt-point metal. Further, the nonvolatile semiconductor storage has a protective film 15 formed on the side of the conductive film 11. No protective films 15 are formed on the side of the floating gate electrode 4. COPYRIGHT: (C)2007,JPO&INPIT
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