| 摘要 |
A MOSFET device ( 100 ) in a mono-crystalline semiconductor material ( 101 ) of a first conductivity type, which comprises a source and a drain of the opposite conductivity type, each having regions of polycrystalline semiconductor ( 110, 120 ) and respective junctions ( 112 a, 122 a) in monocrystalline semiconductor. Localized buried insulator regions ( 113, 123 ) are below the polycrystalline source and drain regions, and a gate ( 130 ) between the source and drain regions is located so that the gate channel ( 134 ) is formed in bulk mono-crystalline semiconductor material. As an example, the semiconductor is silicon, the first conductivity type is p-type and the localized buried insulator is silicon dioxide. The semiconductor material may also include silicon germanium.
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