| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for producing a silicon carbide single crystal wafer by which the coefficient of utilization of a bulk silicon carbide single crystal and the device characteristics can be enhanced and the cleavability can be improved; and to provide the silicon carbide single crystal wafer obtained by the process. SOLUTION: The silicon carbide single crystal wafer is epitaxially grown on a substrate obtained by cutting at an off-angle of <2°from the (0001) c-plane of anα-type silicon carbide single crystal and an off-direction that the deviation from the <11-20> direction is <10°, and is characterized in that the number of stacking faults each having a nearly triangular shape and being exposed to the wafer surface is <4 pieces/cm<SP>2</SP>on the entire wafer surface. COPYRIGHT: (C)2007,JPO&INPIT
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