| 摘要 |
PROBLEM TO BE SOLVED: To provide a crystal film, crystal substrate, and semiconductor device which are low in a dislocation density, using a crystal base containing dislocation. SOLUTION: A crystal layer 23 is formed on one surface of a substrate 11 for growing a crystal via a buffer layer 12. In the crystal layer 23, at least part of the voids 23a, 23b configured by an amorphous material are formed at an end to which each dislocation D<SB>1</SB>extends from the lower part. Because the voids 23a, 23b prevent each dislocation D<SB>1</SB>from transmitting to the upper part, a crystal layer of a low dislocation density can be formed in the upper part. COPYRIGHT: (C)2007,JPO&INPIT
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