| 摘要 |
PROBLEM TO BE SOLVED: To provide the method of manufacturing a semiconductor device having a stable device isolation structure in which a trench is easily embedded while suppressing consumption by the oxidation of an active region. SOLUTION: The semiconductor device invention comprises an upper portion trench 110 for defining an active region, a semiconductor substrate 100 in which a lower trench 120 having a cross-sectional profile in the shape of a round is formed under the upper trench such that it is communicated with the upper trench, and a device isolation film 150 formed in the upper trench and the lower trench of the semiconductor substrate. The device isolation film is formed only in the upper trench. The film comprises a first insulating film covering the inner wall of the upper trench in the shape of a spacer, a second insulating film embedded in the upper trench in a state where it is surrounded by the first insulating film, and a third insulating film covering the interior wall of the lower trench such that a void of a predetermined profile is demarcated in the lower trench. COPYRIGHT: (C)2007,JPO&INPIT
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