| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method capable of improving in-plane uniformity in dimension precision by preventing in-plane variations in etching machining precision caused by the absorption of water in a film to be etched, where machining characteristics are affected greatly by degassing from a material surface, and to provide a method for manufacturing a semiconductor device. SOLUTION: Degassing treatment is performed to remove water from a low-permittivity film 103 while a mask pattern layer such as an inorganic mask layer 104 and a resist pattern 105 is formed at the upper section of the low-permittivity film (the film to be etched) 103. The degassing treatment is performed by heating the periphery of the film to be etched in a pressure-reduced atmosphere. After that, dry etching treatment is applied to the low-permittivity film 103 from the upper portion of the mask pattern layer successively. The degassing treatment and the dry etching one are performed continuously in the pressure-reduced atmosphere. COPYRIGHT: (C)2007,JPO&INPIT
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