发明名称 |
MOS transistor device structure combining Si-trench and field plate structures for high voltage device |
摘要 |
A metal-oxide-semiconductor transistor device for high voltage (HV MOS) and a method of manufacturing the same are disclosed. The HV MOS transistor device comprises a field oxide region with an indented lower surface combined with a plurality of field plates to elongate the path for disturbing the lateral electric field, therefore the transistor device has a relatively small size.
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申请公布号 |
US2006270171(A1) |
申请公布日期 |
2006.11.30 |
申请号 |
US20060420006 |
申请日期 |
2006.05.24 |
申请人 |
CHEN LI-CHE;WANG CHIH-CHONG |
发明人 |
CHEN LI-CHE;WANG CHIH-CHONG |
分类号 |
H01L29/76;H01L21/336 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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