| 摘要 |
A method and arrangement are provided for programming an electrically erasable programmable read-only memory cell capable of storing at least one information bit. The memory cell has a charge-trapping region. According to the invention, during a first period of time, a fixed voltage is applied to the memory cell to inject and store electrical charge in the charge-trapping region. This period of time is followed by second period of time during which a constant current is applied to the memory cell to complete the programming step. By monitoring a change in voltage during the second period of time, a monitoring of a resulting threshold voltage is possible directly during programming.
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