| 摘要 |
A power semiconductor device to which a large current can be applied and which can be fabricated compactly in a shorter time, including an electrode structure for taking out electrodes from a power semiconductor element mounted on one of a plurality of circuit patterns formed on an insulating substrate inside of a case up to an external-connection terminal exposed outside of the case, and an external-connection terminal insert-formed on the body of the case, exposed to the outside of the case at one end of the terminal and having a junction portion at its other end joined to a circuit pattern different from the circuit pattern on which the power semiconductor element is mounted. The junction portion is directly connected with the power semiconductor element through a wire member bonded to the face opposite to the junction face of the terminal. |
