| 摘要 |
A method for fabricating a landing plug contact of a semiconductor device is provided to improve polishing uniformity of a peripheral region in a planarization process by eliminating a landing plug nitride layer. An interlayer dielectric(423) is formed on a semiconductor substrate(400). The interlayer dielectric has a gate stack(420) whose upper surface is exposed. A landing plug oxide layer(425) and a landing plug nitride layer are sequentially formed on the gate stack and the interlayer dielectric. Parts of the landing plug nitride layer and the landing plug oxide layer are removed to form a landing plug contact hole(424). A landing plug conductive layer(435) is gap-filled in the landing plug contact hole. The landing plug nitride layer is removed to expose parts of upper sides of the landing plug oxide layer and the landing plug conductive layer. A planarization process is performed on the exposed landing plug conductive layer and the landing plug oxide layer to form a landing plug contact.
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