| 摘要 |
PROBLEM TO BE SOLVED: To obtain a manufacturing method for a thin-film transistor capable of preventing the damage of a channel forming region by an etching. SOLUTION: Cl radicals and F radicals are generated in a microwave generator 21, and these generated radical species 24 are introduced into a chamber 20 through piping 22. The etching of the n+a-Si:H layer 5 of a substrate 100 progresses by a chemical reaction by the radical species 24 introduced into the chamber 20. That is, the n+a-Si:H layer 5 is etched by a pure chemical etching depending upon the chemical reaction substantially only by the radical species 24 with no physical reaction to the n+a-Si:H layer 5 and an a-Si:H layer 4 by ion species, and the a-Si:H layer 4 is exposed in the channel forming region. COPYRIGHT: (C)2007,JPO&INPIT
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