| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of realizing the microfabrication of an IGFET as well as the increase of operating speed of the IGFET. SOLUTION: The semiconductor device 1 is provided with a semiconductor active region 3; the IGFET 4 arranged in the semiconductor active region 3; and an interelement separating region 10 surrounding the periphery of side surface of the semiconductor active region 3, and in which the dielectric constant k of the side surface 10C contacted with the channel forming region 5 of the IGFET 4 is lower compared with the dielectric constant k of a central part 10B and a bottom surface 10D. COPYRIGHT: (C)2007,JPO&INPIT
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