| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor (TFT) loaded panel of which the thin-film transistor formed on a plastic substrate will not peel due to interfacial delamination between the plastic substrate and a buffer layer, even if due to various thermal histories applied during a TFT manufacturing process. SOLUTION: The thin-film transistor loaded panel has a polysilicon thin film 13 formed on a plastic substrate 10 through a buffer layer 12. An inorganic adhesion layer 11 is formed between the plastic substrate 10 and the buffer layer 12. The inorganic adhesion layer 11 is preferably any one selected from among chromium titanium, aluminum, silicon, chrome oxide, titanium oxide, aluminium oxide, silicon nitride, and silicon oxynitride, and the buffer layer 12 is preferably silicon oxide. COPYRIGHT: (C)2007,JPO&INPIT
|
