发明名称 Integrated circuit package substrate having a thin film capacitor structure
摘要 This invention relates to the manufacture of a substrate, such as a package substrate or an interposer substrate, of an integrated circuit package. A base structure is formed from a green material having a plurality of via openings therein. The green material is then sintered so that the green material becomes a sintered ceramic material and the base structure becomes a sintered ceramic base structure having the via openings. A conductive via is formed in each via opening of the sintered ceramic base structure. A capacitor structure is formed on the sintered ceramic base structure. The power and ground planes of the capacitor structure are connected to the vias. As such, a capacitor structure can be formed and connected to the vias without the need to drill vias openings in brittle substrates such as silicon substrates. The sintered ceramic material also has a low coefficient of thermal expansion and can resist high temperature processing conditions when manufacturing the capacitor structure, and is inexpensive to manufacture.
申请公布号 US2006270111(A1) 申请公布日期 2006.11.30
申请号 US20060494354 申请日期 2006.07.26
申请人 PALANDUZ CENGIZ A 发明人 PALANDUZ CENGIZ A.
分类号 H01L21/00;H01L23/498;H01L23/64;H05K1/03;H05K1/16 主分类号 H01L21/00
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