| 摘要 |
A memory comprises a plurality of memory units electrically connected. Each of the memory units comprises a pull-down transistor, a plurality of column lines and a selector. Each of the column lines has at least one bit. The selector is electrically connected between the pull-down transistor and the column lines. The selector is arranged to select one from the column lines to be accessed by the pull-down transistor. This results in a memory design that is faster, has more capability, is cheaper to build, quieter, and lower power.
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