| 摘要 |
A double cascode protected switchable voltage source may be used to selectively provide positive or negative voltage sources, for example, to a flash memory. The positive supply may be connected through a PMOS pass device to a first cascode protection device. A negative supply may be connected through an NMOS pass device and an NMOS cascode protection device to an output. The circuits may be designed so that exceeding snapback limits and gate aided drain breakdown are less likely.
|
