摘要 |
The integrated protection circuit according to the invention for ESD protecting an circuit device having at least one pad, e.g. a I/O pad, comprises a first transistor (MPI) whose control outputs are connected between the pad ( 2, 3 ) and the control input of a clamp transistor (MN 4 ). The control outputs of the clamp transistor (MN 4 ) are connected between the pad ( 2, 3 ) and a reference terminal ( 4 ). The protection circuit further comprises a second transistor (MN 3 ) whose control outputs are connected between the control output of the first transistor (.MP 1 ) and the reference terminal ( 4 ). Finally the protection circuit also comprises time-delay elements (R, MN 1 ) connected between a supply voltage terminal ( 1 ) and the control inputs of the first transistor (MP I) and the second transistor (MN 3 ).
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