| 摘要 |
In a SiC semiconductor device fabrication method, on fabricating a SiC semiconductor device, a graphite layer formed on a Ni silicide film is eliminated by sputtering, oxidation, reduction, or evaporation of heating. A wiring electrode is then formed on the Ni silicide on which no graphite layer is formed. This increases adhesion force between the wiring electrode and the Ni silicide film on the SiC substrate, and thereby prevents that the wiring electrode peels off from the Ni silicide film on the SiC substrate.
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