| 摘要 |
<p>It is possible to provide a micro region imaging device capable of performing high-speed scan with a high resolution while eliminating affect of an external noise and a DC level change of substrate current. The micro region imaging device includes an electron beam irradiation unit (102) for applying an electron beam X to a semiconductor wafer (10) as an imaging object; a current detection unit (110) for detecting an AC component of the substrate current i generated by irradiation of the electron beam X; and an image data generation unit (120) for generating image data indicating the surface state of the semiconductor wafer (10) according to the output "out" of the current detection unit (110). Instead of directly detecting the substrate current i generated by irradiation of the electron beam X, its AC component is detected. Accordingly, even if a current drift is caused by the initial charge, it is possible to correctly perform imaging without being affected by the current drive. Moreover, the imaging is not much affected by the external noise such as vibration, thermal noise, or unnecessary radiation (EMI).</p> |
