| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent breakage of a nitride layer of a PMD(Pre Metal Dielectric) by forming a silicide inhibition layer on a non-silicide region. A gate insulating layer(34) is formed on a substrate(30). A gate conductive layer is deposited on the gate insulating layer and etched slantingly, thereby forming a gate(36) with sloped profile. A source/drain is formed in a substrate of both sides of the gate. A spacer(38) is formed at both sidewalls of the gate. A silicide inhibition layer(40) is then formed on a non-silicide region of the substrate.
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