| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a combination of a low-resistivity, or electrically conducting silicon layer which is transparent to long or short wavelength photons and is attached to the backside of a photon-sensitive layer of silicon such as a silicon wafer (6) or chip. <P>SOLUTION: The window is applied to photon-sensitive silicon devices such as photodiodes, charge-coupled devices, active pixel sensors, low-energy X-ray sensors and other radiation detectors. The silicon window is applied to the backside (10) of a photosensitive silicon wafer or chip so that photons can illuminate the device from the backside without interference from the circuit printed on the frontside. A voltage sufficient to fully deplete the high-resistivity photosensitive silicon volume of the charge carriers is applied between the low-resistivity backside window and the frontside, that is, a patterned side of the device. <P>COPYRIGHT: (C)2007,JPO&INPIT |
