| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which comprises a fine strip parallel pn layer by a trench embedding method, in which an avalanche breakdown occurs in an active region earlier than a breakdown strength structure, and a tolerable amount of avalanche is high to provide breakdown strength characteristics with high reliability. <P>SOLUTION: This semiconductor device comprises a plurality of second conductive semiconductor epitaxial layers which are formed in a depth to a low resistive substrate layer, in a first conductive drift layer laminated on the first conductive low resistive substrate layer with the plane embedding a parallel trench of a fine strip shape; and the fine strip parallel pn layer which is composed of an aggregate of the first conductive semiconductor layer between the parallel trenches and the second conductive semiconductor epitaxial layers. An impurity concentration of the second conductive semiconductor epitaxial layer is 1.15 times that of the first conductive semiconductor layer. <P>COPYRIGHT: (C)2007,JPO&INPIT |
