| 摘要 |
PROBLEM TO BE SOLVED: To prevent occurrence of undesired remaining part of a metal wire in a forming process of a metal wiring layer after forming an interlayer. SOLUTION: This method is provided with a processes of: forming a gate electrode 2 on a semiconductor substrate 1, and thereafter forming a PSG film 3 on the whole surface of the upper side of the semiconductor substrate on which the gate electrode is formed; forming a BPSG film 5 on the PSG film to form the interlayer 8 consisting of both of the films; and carrying out thermal treatment to the interlayer. The BPSG film is formed thinner than the PSG film. In particular, the ratio of the thickness of the BPSG film is 20% to 30% of the thickness of the interlayer. COPYRIGHT: (C)2007,JPO&INPIT
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