| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method which can easily manufacture a high-performance semiconductor device. SOLUTION: The semiconductor device manufacturing method includes a process S1 for forming a laminated layer which has a first amorphous silicon layer substantially composed of an amorphous silicon, and a catalyst layer containing a catalyst to promote the crystallization of the first amorphous silicon layer and having the catalyst layer laminated on the first amorphous silicon layer; a first crystallization process S2 which forms a first crystallized silicon layer by crystallizing the first amorphous silicon layer with the catalyst; a process S4 which forms a second amorphous silicon layer substantially composed of an amorphous silicon on the crystallized silicon layer; and a second crystallization process S5 which forms a second crystallized silicon layer by crystallizing the second amorphous silicon layer. COPYRIGHT: (C)2007,JPO&INPIT
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