| 摘要 |
PROBLEM TO BE SOLVED: To provide a double-hetero structured red semiconductor laser element which has superior linearity in the optical output vs. current characteristic, while having high output power, and to provide a method of manufacturing the same. SOLUTION: The red semiconductor laser element 10 comprises at least a first conductivity-type AlGaInP cladding layer 13, a GaInP active layer 17, and a second conductivity-type AlGaInP cladding layer 18, sequentially stacked on a GaAs semiconductor substrate 11. The semiconductor laser element also has a ridge 21, consisting of a ridged second conductivity-type AlGaInP clad layer 18', a second conductivity-type GaInP contact layer 19', and a second conductivity-type GaAs capping layer 20', stacked sequentially on the second conductivity-type AlGaInP clad layer 18. The side surfaces of the ridge 21 and the surface of the second conductivity-type AlGaInP clad layer 18 are covered by a first conductivity-type AlInP layer 23, a first conductivity-type GaAs current blocking layer 24, and a GaInP layer 25, stacked sequentially thereon. COPYRIGHT: (C)2007,JPO&INPIT
|
