SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

PROBLEM TO BE SOLVED: To provide an SiC power device that achieves a low resistance wiring and a via plug with a low resistance and a high aspect ratio. SOLUTION: This semiconductor device comprises: a silicon carbide semiconductor substrate 11; a source electrode (ohmic electrode) 15 formed on the main surface of the silicon carbide semiconductor substrate 11; a via plug 25 or wiring 21 to be used for electric connection to the source electrode 15; and a drain electrode (ohmic electrode) 22 formed on the back of the silicon carbide semiconductor substrate 11. A material with a melting point higher than the sintering temperature of the drain electrode 22 is used for the via plug 25 or wiring 21, or tungsten or copper is preferably used for the plug or wiring. COPYRIGHT: (C)2007,JPO&INPIT