| 摘要 |
PROBLEM TO BE SOLVED: To provide an electric charge-storage type memory which realizes microfabrication of the memory cell. SOLUTION: The electric charge-storage type memory comprises a first barrier layer 2, an electric charge storage layer 3, and a second barrier layer 4 using aluminum oxide. Moreover, the thickness of the electric charge storage layer 3 is made within the range of a layer of 1-9 atoms, in addition, aluminum atoms are made to exist in the electric charge storage layer 3 in excess, in view of the stoichiometry, and localization level of aluminum atoms is made to exceed by 50 in the electric charge storage layer 3, when the size of the memory cell is a 10 nm square. COPYRIGHT: (C)2007,JPO&INPIT
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