| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist removing method capable of high-efficient and uniform removal, even if it is a resist of the surface of a substrate wherein dry etching processing and/or reactant ion implantation processing are performed, and to provide a resist removing apparatus. SOLUTION: The resist removing method is for the removal of a resist of a substrate wherein dry etching processing and/or reactant ion implantation processing are performed. One set of processes consisting of ozone water disposal for processing the treated surface of the substrate with ozone water, and solvent disposal for processing the treated surface of the substrate by an organic solvent are carried out by twice or more repetition. COPYRIGHT: (C)2007,JPO&INPIT
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