发明名称 SEMICONDUCTOR ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor element that reduces polarization generated by the lamination of two semiconductor layers having different composition each other, has a mesa section for enabling a carrier to move smoothly, and has low electric resistance. SOLUTION: A band gap change layer of which the composition changes is arranged between the two semiconductor layers that are laminated at the mesa section and have different composition each other in a lamination direction. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006324279(A) 申请公布日期 2006.11.30
申请号 JP20050143500 申请日期 2005.05.17
申请人 ROHM CO LTD 发明人 OTA HIROAKI;NISHIDA TOSHIO
分类号 H01S5/343;H01L29/201 主分类号 H01S5/343
代理机构 代理人
主权项
地址