摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of supplying a stable internal voltage to a bank regardless of the number of operating banks. SOLUTION: Internal power source circuits (1301 and 1303) are disposed in banks (B1 and B2), internal power source lines for transmitting internal power source voltages generated by these internal power source circuits to sense amplifiers (SA1-SAn, 2007) are independently disposed, sense ground lines (2003B1 and 2003B2) for transmitting ground voltages to the sense amplifiers of the banks are individually independently arranged in the banks, and mutually connected in an area outside the banks. Thus, by preventing the propagation of noise in a bank to the other bank, an internal voltage is stably transmitted to the sense amplifier of each bank. COPYRIGHT: (C)2007,JPO&INPIT
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