发明名称 |
Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices |
摘要 |
Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 360 nm with wall plug efficiencies of at least than 4% are provided. Wall plug efficiencies may be at least 5% or at least 6%. Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 345 nm with wall plug efficiencies of at least than 2% are also provided. Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 330 nm with wall plug efficiencies of at least than 0.4% are provided. Light emitting devices and methods of fabricating light emitting devices having a peak output wavelength of not greater than 360 nm and an output power of at least 5 mW, having a peak output wavelength of 345 nm or less and an output power of at least 3 mW and/or a peak output wavelength of 330 nm or less and an output power of at least 0.3 mW at a current density of less than about 0.35 muA/mum<SUP>2 </SUP>are also provided. The semiconductor light emitting devices may have a direct current lifetime of at least 100 hours, at least 500 hours or at least 1000 hours.
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申请公布号 |
US2006267043(A1) |
申请公布日期 |
2006.11.30 |
申请号 |
US20050140384 |
申请日期 |
2005.05.27 |
申请人 |
EMERSON DAVID T;BERGMANN MICHAEL J;ABARE AMBER;HABERERN KEVIN |
发明人 |
EMERSON DAVID T.;BERGMANN MICHAEL J.;ABARE AMBER;HABERERN KEVIN |
分类号 |
H01L31/00;H01L21/00;H01L33/06;H01L33/12;H01L33/32 |
主分类号 |
H01L31/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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