发明名称 |
Method for manufacturing contact structures for dram semiconductor memories |
摘要 |
A method for manufacturing contact structures for DRAM semiconductor memories is disclosed. In one embodiment, contact openings are formed in a support area after execution of high-temperature processes for activating doping agents and repairing crystal defects. A low contact resistance between a conductive contact opening filling and an adjacent semiconductor substrate is achieved by forming a cobalt silicide or nickel silicide.
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申请公布号 |
US2006270143(A1) |
申请公布日期 |
2006.11.30 |
申请号 |
US20060436376 |
申请日期 |
2006.05.18 |
申请人 |
GOLDBACH MATTHIAS;FRITZ CLEMENS;DUPONT AUDREY |
发明人 |
GOLDBACH MATTHIAS;FRITZ CLEMENS;DUPONT AUDREY |
分类号 |
H01L21/8244 |
主分类号 |
H01L21/8244 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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